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What is the threshold voltage in millivolts for a MOS capacitor with an N+ polysilicon gate and a P-type body doped with boron at a concentration of 2 x10^16 /cm^3 ? Assume that the oxide thickness is 77.7 angstroms. Use: kT/q = 26 mV and ni = 1.5×10^10 /cm^3 at 300∘K, εs = 11.7, εox = 3.9, ε0 = 8.854×10^−14 F/cm, and q = 1.6×10^−19 C. Assume that the intrinsic Fermi level, Ei, is in the middle of the band-gap, and use Eg = 1.12 eV. For this question, be sure to give your answer to the nearest millivolt! Answer: The correct answer is: -36

What is the threshold voltage in millivolts for a MOS capacitor with an N+ polysilicon gate and a P-type body doped with boron at a concentration of 2 x10^16 /cm^3 ? Assume that the oxide thickness is 77.7 angstroms. Use: kT/q = 26 mV and ni = 1.5×10^10 /cm^3 at 300∘K, εs = 11.7, εox = 3.9, ε0 = 8.854×10^−14 F/cm, and q = 1.6×10^−19 C. Assume that the intrinsic Fermi level, Ei, is in the middle of the band-gap, and use Eg = 1.12 eV. For this question, be sure to give your answer to the nearest millivolt! Answer: The correct answer is: -36

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What is the threshold voltage in millivolts for a MOS capacitor with an N+ polysilicon gate and a P-type body doped with boron at a concentration of 2 x 10 ∧ 16 / c m ∧ 3 ? Assume that the oxide thickness is 77.7 angstroms. Use: k T / q = 26 m V and n i = 1.5 × 10 ∧ 10 / c m ∧ 3 at 300 ∘ K , ε s = 11.7 , ε 0 x = 3.9 , ε 0 = 8.854 × 10 ∧ − 14 F / c m , and q = 1.6 × 10 ∧ − 19 C . Assume that the intrinsic Fermi level, Ei, is in the middle of the band-gap, and use Eg = 1.12 e V . For this question, be sure to give your answer to the nearest millivolt!
Answer: ◻ The correct answer is: -36

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