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When the voltage across the drain and the source (VDS) is increased from a small amount assuming that the NMOS transistor is working in linear region, then the depth of the channel in NMOS transistor Will become non uniform and will take a tapered shape with deepest depth at the drain Will become non uniform and will take a tapered shape with deepest depth at the source Will remain uniform but the width of the channel will increase Will remain uniform but the width of the channel will decrease

When the voltage across the drain and the source (VDS) is increased from a small amount assuming that the NMOS transistor is working in linear region, then the depth of the channel in NMOS transistor Will become non uniform and will take a tapered shape with deepest depth at the drain Will become non uniform and will take a tapered shape with deepest depth at the source Will remain uniform but the width of the channel will increase Will remain uniform but the width of the channel will decrease

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When the voltage across the drain and the source ( V D S ) is increased from a small amount assuming that the NMOS transistor is working in linear region, then the depth of the channel in NMOS transistor Will become non uniform and will take a tapered shape with deepest depth at the drain Will become non uniform and will take a tapered shape with deepest depth at the source Will remain uniform but the width of the channel will increase Will remain uniform but the width of the channel will decrease

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