Question

Notify Me Bookmark

Suppose A is a 5×10 matrix, B is a 20×10 matrix, and C is a 10×10 matrix. Determine whether each of the following expressions make sense. If the expression makes sense, give its dimensions. (a) ATA + C. (b) BC3. (c) I + BCT. (d) BT − [C I]. (e) B[A A]C

Suppose A is a 5×10 matrix, B is a 20×10 matrix, and C is a 10×10 matrix. Determine whether each of the following expressions make sense. If the expression makes sense, give its dimensions. (a) ATA + C. (b) BC3. (c) I + BCT. (d) BT − [C I]. (e) B[A A]C

Image text
Suppose A is a 5 × 10 matrix, B is a 20 × 10 matrix, and C is a 10 × 10 matrix. Determine whether each of the following expressions make sense. If the expression makes sense, give its dimensions. (a) A T A + C . (b) B C 3 . (c) I + B C T . (d) B T − [ C I ] . (e) B [ A A ] C

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

Matrix dimensions. Suppose A is an m×n matrix, and B is a p×q matrix. For each of the following equations, give the conditions on m, n, p, q under which it makes sense. For example, A = B requires that m = p and n = q. (a) ATB = I. (b) AB = 0. (c) AB = BA. (d) AT = [B I]. (e) [A B] = I.
Solution
0 0

An ideal MOS capacitor is constructed on a p-type Si substrate with NA = 1 e16 cm−3 doping. When following material parameters are given, answer the questions: ϕm; metal work function = 4.65 eV χ; electron affinity of silicon = 4.03 eV tox ; oxide thickness = 15 nm εox; oxide permittivity = 4 ε0 εs; silicon permittivity = 12 ε0 ε0; free space permittivity = 8.85×10−14 F/cm (a) Find the threshold voltage VT, the depletion width, and draw its band diagram. (b) Sketch the charge distribution as a function of position when VT is applied. (c) Sketch the surface potential ϕs, the depletion width Wd, and charge density as a function of bias including VFB and VT. (d) Calculate the unit area capacitances when VFB and VT is applied. (e) What is the electric field of the oxide in an ideal MOS given in this problem? What is the assumption you made to obtain the oxide electric field in an ideal MOS? (f) In general, charges in the oxide cause a shift in the gate voltage required to reach the threshold condition: ΔVT = −1 εox∫0 tox xρox(x)dx If ρox(x) = Aδ(x−b) is given, find the threshold voltage shift for the following cases where δ(x−b) is a delta function and A is a arbitrary constant. (1) b = 0 (2) b = tox/2 (3) b = tox
Solution
0 0

Dynamic CMOS Circuits (a) During precharge (Clk=0), All inputs are logic 0 for the following Dynamic 3NAND. During evaluation (Clk=1), A is activated (0 → 1). Given VDD = 1.5 V, Vtn = 0.5 V, CL = 150 fF, C1 = 25 fF, and C2 = 50 fF, what is the final output voltage? (b) Calculate C1 of the following circuit so that the final voltage is determined by A input. CL = 175 fF, VDD = 1.5 V, and Vtn = 0.5 V. Assume that all inputs are logic 0 during the precharge. (c) i) Write the Boolean expression for OUT of the following circuit. ii) VDD = 2.0 V and Vtn = 0.5 V. During precharge (Clk = 0), All inputs are logic 0. During evaluation (C∣k = 1), A and B are activated (0 → 1). What is the final voltage when the evaluation mode settles?
Solution
0 0