Question

Notify Me Bookmark

A sinusoidal electromagnetic wave has an electric field whose rms value is 100 V/m. What is the instantaneous rate S of energy flow for this wave? 1.7 × 10-4 W/m2 13 W/m2 27 W/m2 1.0 × 105 W/m2 4.0 × 1010 W/m2

A sinusoidal electromagnetic wave has an electric field whose rms value is 100 V/m. What is the instantaneous rate S of energy flow for this wave? 1.7 × 10-4 W/m2 13 W/m2 27 W/m2 1.0 × 105 W/m2 4.0 × 1010 W/m2

Image text
A sinusoidal electromagnetic wave has an electric field whose rms value is 100 V/m. What is the instantaneous rate S of energy flow for this wave? 1.7 × 10-4 W/m2 13 W/m2 27 W/m2 1.0 × 105 W/m2 4.0 × 1010 W/m2

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

The microwave radiation left over from the Big Bang explosion of the universe has an average energy density of 3.91×10−14 J/m3. What is the rms value of the electric field of this radiation?
Solution
0 0

A MOS capacitor has an n+ polysilicon gate with EF = EC+0.15 eV in the polysilicon, a 50 nm thick SiO2 gate dielectric with Qss = 0, and a p-type silicon substrate with Na = x.5×1016 /cm3, where x is the last digit of your student number. For silicon at room temperature ni = 1010 /cm3, Nv = 1.8×1019 /cm3, Nc = 3.2×1019 /cm3, and ϵSi = 11.7ϵ0. For SiO2 ϵSiO2 = 3.9ϵ0. a. Find the threshold voltage for this MOS capacitor. b. If the capacitor is made into a MOSFET with L = 2 μm, W = 200 μm, and a channel field effect mobility of 450 cm2/V⋅s, find ID for VGS − VT = 2 V and VDS = 1 V. c. Suppose it is desired to have a depletion mode MOSFET and that any gate oxide thickness is possible, but no other parameters can be changed. What is the most negative threshold voltage that is possible for the MOS capacitor with your substrate doping? d. Suppose it is desired to have a MOSFET with a threshold voltage of +0.5 V and again any gate oxide thickness is possible, but no other parameters can be changed. What oxide thickness will give VT = 0.5 V ? e. Suppose the source, drain, and body of the MOSFET are all grounded and the capacitance-voltage characteristics are measured. Sketch the high and low frequency capacitance-voltage characteristics and label significant features.
Solution
0 0

An electromagnetic wave travels in the positive direction of a z axis, with the electric fields oscillating parallel to the x axis. The rms value of the electric fields is 7.40 × 10-5 V/m and the wavelength is 300 nm. In the following equation for the electric component of the wave, what goes in the second underscored blank for the angular wave number (m-1)? Ex = _sin(_z__t) 9.85 × 108 3.77 × 107 1.05 × 107 6.18 × 107 4.97 × 107 2.09 × 107 4.24 × 108 8.12 × 107 1.20 × 108 9.02 × 108
Solution
0 0