Question

Notify Me Bookmark

Make use of Table 1.4 to express the following quantities in BG units: (a) 4.90 km, (b) 7.19 N/m3, (c) 0.530 kg/m3, (d) 0.00100 N⋅m/s, (e) 7.38 mm/hr. (a) ft (b) lb/ft3 (c) slugs/ft3 (d) ft∗lb/s (e) ft/s TABLE 1.4 Conversion Factors from SI Units to BG and EE Unitsa

Make use of Table 1.4 to express the following quantities in BG units: (a) 4.90 km, (b) 7.19 N/m3, (c) 0.530 kg/m3, (d) 0.00100 N⋅m/s, (e) 7.38 mm/hr. (a) ft (b) lb/ft3 (c) slugs/ft3 (d) ft∗lb/s (e) ft/s TABLE 1.4 Conversion Factors from SI Units to BG and EE UnitsaMake use of Table 1.4 to express the following quantities in BG units: (a) 4.90 km, (b) 7.19 N/m3, (c) 0.530 kg/m3, (d) 0.00100 N⋅m/s, (e) 7.38 mm/hr. (a) ft (b) lb/ft3 (c) slugs/ft3 (d) ft∗lb/s (e) ft/s TABLE 1.4 Conversion Factors from SI Units to BG and EE Unitsa

Image text
Make use of Table 1.4 to express the following quantities in BG units: (a) 4.90 km , (b) 7.19 N / m 3 , (c) 0.530 k g / m 3 , (d) 0.00100 N ⋅ m / s , (e) 7.38 m m / h r . (a) i ◻ ft (b) ◻ l b / f t 3 (c) i i (d) ◻ f t ∗ l b / s (e) ◻ f t / s
TABLE 1.4 Conversion Factors from SI Units to BG and EE Unitsa

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

The following circuit diagram shows the use of two such MOS transistors for the implementation of a fundamental logic gate in digital ICs. Both MOS transistors (M1 & M2) have the same threshold voltage VT = 0.5 V and µCox = 10-4 A/V2. Fig. 2.1 (a). What are the operation modes of the MOS transistors (MI&M2) when the input is a logic “low” signal (i.e. Vin = 0 V )? (b). Find out the expression of the current flowing through the MOS transistor M2 as a function of the output voltage Vout. Then determine the current when Vout = 1.5 V. (c). Using results in (a) and (b) as a hint, hence or otherwise, determine VOH (i.e. the maximum output voltage when the output is a logic “high” signal). (d). Based on the results in (b) and (c), hence or otherwise, describe two advantages of digital circuits with CMOS implementation compared with the implementation in Fig. 2.1. (e). Draw a schematic circuit diagram of the CMOS implementation of the logic circuit in Fig. 2.1. You must use standard circuit symbols and show the signal interconnections clearly with proper labels.
Solution
0 0

Question 1. Current calculations in 180 nm node MOSFET transistor technology I An n-MOSFET is fabricated in 0.18 μm technology characterized by the following process and device parameters: VDD = 1.8 V, Vtn = 0.5 V, L = 0.18 μm, Wn = 0.27 μm and a SiO2 thickness of 4 nm, in the usual notation. Take the relative dielectric constant of SiO2 to be 3.9 and ε0 to be 8.85 ×10−12 F/m. (a) What is the process transconductance parameter, kn, if the electron mobility is 400 cm2 /Vs. Express your answer in A/V2 and μA/V2. Explain why the units of kn are A/V2 or μA/V2. (b) If the mobility of holes in silicon is 1 /3 that of electrons, by what factor will kp differ from kn ? Why is this important? (c) What is the capacitance per unit area (Cox) for a 10 nm thick SiO2 ? The SI unit of areal capacitance is F/m2 but device engineers often use F/cm2 or fF/μm2. Express your answer in both these units as well. Instead of calculating the capacitance per unit area again for different oxide thicknesses device engineers may employ a scaling argument. How would your answer above change if the oxide thickness was (i) increased to 20 nm, (ii) reduced to 3 nm or (iii) reduced to 1 nm (d) How much drain current flows in the transistor if VDS = 0.2 V and VGS = 0.8 V ? Express your answer in μA per micron of device width. Why do you think it is useful to express the drain current as the drain current per μm device width?

Solution
0 0

A PMOS current mirror consists of three PMOS transistors as shown below, one diode-connected (drain and gate terminals are tied together) and two used as current outputs. All transistors have |Vt| = 0.6 V, kp = 100 uA/V2, and L = 1.0 um but three different widths, namely, 10 um (Q1), 20 um (Q2), and 40 um (Q3). (a) When Q1 transistor is diode-connected and is supplied from a 100 uA current source, find the output currents I2 and I3. (b) Find the output currents I1 and I3 when Q2 transistor is diode-connected. (c) Find the output current I3 when both Q1 and Q2 transistors are diode-connected. (Hint: find the effective width first) (d) Find the output current I2 when both Q1 and Q3 transistors are diode-connected. (e) Calculate the values of VSG for the following case: 1) Q1 is diode-connected, and 2) Q1 and Q2 are diode-connected.
Solution
0 0