Question

Notify Me Bookmark

The electric field in a region of space has the components Ey = Ez = 0 and Ex = (5.90 N/(C⋅m))x. Point A is on the y axis at y = 3.40 m, and point B is on the x axis at x = 4.10 m. What is the potential difference (in V) VB−VA? Number Units

The electric field in a region of space has the components Ey = Ez = 0 and Ex = (5.90 N/(C⋅m))x. Point A is on the y axis at y = 3.40 m, and point B is on the x axis at x = 4.10 m. What is the potential difference (in V) VB−VA? Number Units

Image text
The electric field in a region of space has the components E y = E z = 0 and E x = ( 5.90 N / ( C ⋅ m ) ) x . Point A is on the y axis at y = 3.40 m , and point B is on the x axis at x = 4.10 m . What is the potential difference (in V ) V B − V A ?
Number i Units

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

A point charge q1 = 4.10 nC is located at the x-axis at x = 2.00 m, and a second point charge q2 = −6.30 nC is on the y-axis at y = 1.00 m. What is the total electric flux due to these two point charges through a spherical surface centered at the origin and with the following radius? (a) 0.500 m N⋅m2 /C (b) 1.50 m N⋅m2 /C (c) 2.50 m N⋅m2 /C
Solution
0 0

Two particles are fixed on an x axis. Particle 1 of charge 40.8 μC is located at x = −11.1 cm; particle 2 of charge Q is located at x = 11.2 cm. Particle 3 of charge magnitude 42.8 μC is released from rest on the y axis at y = 11.1 cm. What is the value of Q if the initial acceleration of particle 3 is in the positive direction of (a) the x axis and (b) the y axis? (a) Number Units (b) Number Units
Solution
0 0

An ideal MOS capacitor is constructed on a p-type Si substrate with NA = 1 e16 cm−3 doping. When following material parameters are given, answer the questions: ϕm; metal work function = 4.65 eV χ; electron affinity of silicon = 4.03 eV tox ; oxide thickness = 15 nm εox; oxide permittivity = 4 ε0 εs; silicon permittivity = 12 ε0 ε0; free space permittivity = 8.85×10−14 F/cm (a) Find the threshold voltage VT, the depletion width, and draw its band diagram. (b) Sketch the charge distribution as a function of position when VT is applied. (c) Sketch the surface potential ϕs, the depletion width Wd, and charge density as a function of bias including VFB and VT. (d) Calculate the unit area capacitances when VFB and VT is applied. (e) What is the electric field of the oxide in an ideal MOS given in this problem? What is the assumption you made to obtain the oxide electric field in an ideal MOS? (f) In general, charges in the oxide cause a shift in the gate voltage required to reach the threshold condition: ΔVT = −1 εox∫0 tox xρox(x)dx If ρox(x) = Aδ(x−b) is given, find the threshold voltage shift for the following cases where δ(x−b) is a delta function and A is a arbitrary constant. (1) b = 0 (2) b = tox/2 (3) b = tox
Solution
0 0